Deposition & Etching

The George Washington University (GW) Nanofabrication and Imaging Center (GWNIC) houses a number of systems used for deposition and etching, including:

Versaline Deep Silicon Etch III

The Versaline Deep Silicon Etch III (DSE III) system is designed to etch very high aspect ratio features while providing very smooth sidewall profiles. The DSE III chamber features:

  • Fast-gas switching capabilities for Bosch etching (SF6 and C4F8)
  • Process pressure control
  • Heated chamber components

The DSE system is capable of etching silicon, SOI and oxides in the same chamber configuration.

 

Versaline Plasma Enhanced Chemical Vapor Deposition (PECVD)

The Versaline PECVD system features an isothermal chamber designed to deposit high-quality dielectric films such as SiO2 and SiNx. Both high-quality films and low stress films are achievable due to the unique chamber design allowing for a very clean environment with very high mean time between cleans (MTBC). The system features EndPointWorksTM optical emission interferometry (OEI) endpoint detection for optimal film thickness control.

 

Apex SLR Inductively Coupled Plasma (ICP)

The Apex SLR is a very flexible system platform for both III/V semiconductor etches and dielectric etchings. The Apex system features single wafer substrate loading with ease-of-use 4-button recipe control from the load lock. The Apex SLR system uses well-established reactor technology that provides reliable performance and is supported with guidance from a continuously evolving process library. The Apex SLR has superior process flexibility for a wide range of applications.

 

Cambridge NanoTech Fiji Atomic Layer Deposition (ALD)

The Fiji series Atomic Layer Deposition (ALD) system with Load Lock is a modular, high-vacuum ALD system that accommodates a wide range of deposition modes using a flexible architecture and multiple configurations of five precursor lines and various plasma gases.